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• W2139891528 abstract "In this paper, we demonstrate high-mobility bulk Ge N- and P-FETs with GeON gate dielectric. The highest electron mobility to date in Ge is reported, and two times improvement over universal hole mobility is achieved for Ge P-FETs. For the first time, the effect of surface orientation on Ge mobility is investigated experimentally. A 50% improvement in electron mobility is shown for the (111) substrate orientation compared to the (100) orientation. Carrier scattering mechanisms are studied through low-temperature mobility measurements and interface characterization. The conductance technique is applied at low temperatures for complete mapping of the density of interface traps (D <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>it</sub> ) across the Ge bandgap and also close to the band edges. Carrier scattering mechanisms and the distribution of D <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>it</sub> are compared for Ge NMOS and PMOS." @default.
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• W2139891528 date "2009-04-01" @default.
• W2139891528 modified "2023-10-01" @default.
• W2139891528 title "Ge (100) and (111) N- and P-FETs With High Mobility and Low-$T$ Mobility Characterization" @default.
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• W2139891528 doi "https://doi.org/10.1109/ted.2009.2014198" @default.
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