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- W2140071925 abstract "The initial stages of the formation of rod-like defects (RLD) in FZ silicon (n-type as well as p-type Si) are investigated by high-resolution electron microscopy (HREM). These defect represent a special type of agglomeration of self-interstitials on {113} planes. As possible sites of their nucleation, interstitial-type clusters are generated by ion implantation (B+, Si+). For their further growth self-interstitials are created by electron irradiation (400 keV) at room temperature. The HREM investigations show that the early stages of RLDs and their further growth are influenced by point defect and impurity clusters existing in the Si bulk.Die Bildung der Anfangsstadien von sogenannten, rod-like' Defekten (RLD) in FZ Silizium (sowohl n- als auch p-dotiertes Material) wird mittels hochauflosender Elektronenmikroskopie (HREM) untersucht. Diese Defekte stellen eine spezielle Form der Agglomeration von eigen-interstitiellen Atomen auf {113} Ebenen dar. Mogliche Stellen fur eine bevorzugte Agglomeration sind Punktdefektcluster, die in den vorliegenden Kristallen durch Ionenimplantation (B+, Si+) erzeugt werden. Die fur das weitere Defektwachstum benotigten Eigen-Zwischengitteratome werden durch Elektronen-Bestrahlung (400 keV) generiert. Die HREM Untersuchungen zeigen, das die fruhen Stadien der RLD's und ihr weiteres Wachstum durch die im Si Kristall vorhandenen Punktdefektcluster beeinflust werden." @default.
- W2140071925 created "2016-06-24" @default.
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- W2140071925 date "1993-06-16" @default.
- W2140071925 modified "2023-09-28" @default.
- W2140071925 title "HREM Investigations of the Agglomeration of Self-Interstitials in Silicon" @default.
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- W2140071925 doi "https://doi.org/10.1002/pssa.2211370223" @default.
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