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- W2140301889 abstract "Experimental studies on the ESD protection were completed on advanced magnetic recording giant magneto-resistive heads using a BiCMOS silicon germanium technology for the first time. SiGe-based active and passive elements, such as isolated MOSFETs, varactors and Schottky diodes were used to evaluate the influence of turn-on voltage on the protection levels." @default.
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- W2140301889 date "2004-09-01" @default.
- W2140301889 modified "2023-10-01" @default.
- W2140301889 title "Electrostatic discharge (ESD) protection of giant magneto-resistive (GMR) recording heads with a silicon germanium technology" @default.
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- W2140301889 doi "https://doi.org/10.1109/eosesd.2004.5272583" @default.
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