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- W2140925341 abstract "This paper presents the design and fabrication of 1600V 4H-SiC UMOSFETs with a novel dual buffer layer structure, which shortens the trench etching time by 2/spl times/ and achieves a high channel periphery density of 3330cm/cm/sup 2/ for low specific on-resistance. The device exhibits 50m/spl Omega/-cm/sup 2/ of specific on-resistance with /spl sim/1/spl mu/m of channel length, and could be further reduced with <1/spl mu/m channel length and optimal fabrication process." @default.
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- W2140925341 date "2005-07-27" @default.
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- W2140925341 title "1600V 4H-SiC UMOSFETs with Dual Buffer Layers" @default.
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- W2140925341 doi "https://doi.org/10.1109/ispsd.2005.1487988" @default.
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