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- W2141350419 abstract "Silicon carbide (SiC) is a promising material for power device applications due to its wide band gap (3.26 eV for 4H-SiC), high critical electric field and excellent thermal conductivity. The Schottky barrier diode is the representative high-power device that is currently available commercially. A field plate edge-terminated 4H-SiC was fabricated using a lift-off process for opening the Schottky contacts. In this case, Ni/Ti dual-metal contacts were unintentionally formed at the edge of the Schottky contacts and resulted in the degradation of the electrical properties of the diodes. The breakdown voltage and Schottky barrier height (SBH, Φ ) was 107 V and 0.67 eV, respectively. To form homogeneous single-metal Ni/4H-SiC Schottky contacts, a deposition and etching method was employed, and the electrical properties of the diodes were improved. The modified SBDs showed enhanced electrical properties, as witnessed by a breakdown voltage of 635 V, a Schottky barrier height of Φ =1.48 eV, an ideality factor of n=1.04 (close to one), a forward voltage drop of V =1.6 V, a specific on resistance of R =2.1 mΩ-cm and a power loss of P =79.6 Wcm ." @default.
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- W2141350419 date "2009-01-01" @default.
- W2141350419 modified "2023-09-28" @default.
- W2141350419 title "Characteristics of Nickel_Titanium Dual-Metal Schottky Contacts Formed by Over-Etching of Field Oxide on Ni/4H-SiC Field Plate Schottky Diode and Improvement of Process" @default.
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- W2141350419 doi "https://doi.org/10.3740/mrsk.2009.19.1.028" @default.
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