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• W2141597988 abstract "Interface engineering technologies are developed for highly-reliable 65 nm-node Cu/low-k interconnect integration using a ULK dielectric (k=2.6) in a hybrid ILD structure. For electromigration (EM) reliability, the mechanical integrity at the SiOC/SiC(N,O) interface exposed on the via sidewalls is found to be critical. For TDDB reliability, reduction in Cu-containing defects at the SiC(N,O)/SiOC interface at the top of the metal line is critical. By optimizing these interfaces, the EM and the TDDB lifetimes are significantly improved." @default.
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• W2141597988 date "2005-08-30" @default.
• W2141597988 modified "2023-09-27" @default.
• W2141597988 title "Interface engineering for highly-reliable 65 nm-node Cu/ULK (k=2.6) interconnect integration" @default.
• W2141597988 doi "https://doi.org/10.1109/iitc.2005.1499910" @default.
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