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- W2141851845 abstract "A high quality BaTiO/sub 3//p-Si interface was achieved at substrate temperature of 500/spl deg/C by using RF magnetron sputtering. In-situ annealing at the same temperature was carried out to study the charge behavior of BaTiO/sub 3/ films on Si substrate. Depending on the annealing oxygen pressure and annealing condition, both polarities of effective oxide charge in the metal-ferroelectric-semiconductor, Au/BaTiO/sub 3//p-Si, structure was observed. It is believed that the density of electronic states, generated at the interface due to the asymmetry of the structure between BaTiO/sub 3/ and Si substrate, and the positive oxide charges, depending on the degree of the metal-oxygen reaction for different annealing oxygen pressures and annealing durations, determines the behavior of oxide charge." @default.
- W2141851845 created "2016-06-24" @default.
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- W2141851845 date "2002-12-17" @default.
- W2141851845 modified "2023-09-26" @default.
- W2141851845 title "Annealing effects on the polarity of stored charge of BaTiO/sub 3/ films on Si" @default.
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- W2141851845 doi "https://doi.org/10.1109/isaf.1994.522408" @default.
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