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• W2141974681 abstract "We present data that show that proton radiation damage can influence the single event gate rupture response of a power MOSFET. A primary phenomenon of single event gate rupture, the drain to gate threshold at which single event gate rupture occurs, drops as a function of device dosage. The shift in the threshold voltage correlates the best with the drop in the voltage at which SEGR occurs. The increase in the field strength due to trapped charges within the oxide during a charge collection event is suspected as the mechanism." @default.
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• W2141974681 date "2007-12-01" @default.
• W2141974681 modified "2023-10-16" @default.
• W2141974681 title "Effect of Dose History on SEGR Properties of Power MOSFETS" @default.
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• W2141974681 doi "https://doi.org/10.1109/tns.2007.910127" @default.
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