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- W2142080212 abstract "Evaluation of the increasing concentration of point defects during an implantation process is a necessary input for TCAD modeling of ultra-shallow junctions. This necessitates knowledge of the relaxation process, particularly of m, the fraction of point defects that survives in situ self-annihilation. Measurement of the /spl alpha//C interface depths for a series of Si doses was applied to the determination of m for various dose rates." @default.
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- W2142080212 date "2002-12-24" @default.
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- W2142080212 title "A physical model for the role of dose and dose rate on amorphous depth generation" @default.
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- W2142080212 doi "https://doi.org/10.1109/iit.1996.586441" @default.
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