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- W2142425756 abstract "A vertical field-effect resonant tunneling transistor is demonstrated consisting of a triple-barrier, double-well resonant tunneling diode (3bRTD) that can be depleted by the action of side gates. The 3bRTD features a double peak current-voltage characteristic in which the second valley current is less than the first valley current. Combination of the resonant tunneling transistor and a constant current load is shown to yield both binary and ternary logic and memory functions.< <ETX xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>></ETX>" @default.
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- W2142425756 date "1994-01-01" @default.
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- W2142425756 title "Coupled-quantum-well field-effect resonant tunneling transistor for multi-valued logic/memory applications" @default.
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- W2142425756 doi "https://doi.org/10.1109/16.277388" @default.
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