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• W2142474886 abstract "Quaternary Ga0.18(1−y)InyTl0.82(1−y)P alloys are lattice matched with InP and their band gaps were predicted to be direct and to vary from zero width to 1.35 eV, the value of InP. This study calculates the branch points of the interface-induced gap states of the binary compound TlP and of the ternary GaTlP and InTlP as well as some quaternary GaInTlP alloys using an empirical tight-binding approach. Several predictions are made. First, the band lineup of lattice-matched InP/Ga0.18(1−y)InyTl0.82(1−y)P heterostructures is of type I. Second, the conduction-band discontinuities are larger than the valence-band offsets. And third, metal/Ga0.18(1−y)InyTl0.82(1−y)P contacts are naturally ohmic for indium contents y smaller than approximately 0.5." @default.
• W2142474886 created "2016-06-24" @default.
• W2142474886 creator A5038776526 @default.
• W2142474886 date "1997-09-01" @default.
• W2142474886 modified "2023-09-23" @default.
• W2142474886 title "Calculation of valence-band offsets of lattice-matched GaInTlP/InP heterostructures and of Schottky barrier heights of metal–GaInTlP contacts" @default.
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• W2142474886 doi "https://doi.org/10.1063/1.119860" @default.
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