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• W2142541931 endingPage "2223" @default.
• W2142541931 startingPage "2223" @default.
• W2142541931 abstract "We have established a selfconsistent modeling of a narrow-gap reactive ion etcher (N-gap-RIE) with parallel-plate geometry in SF 6 . Using the discharge structure of the relaxation continuum model, we have numerically predicted the radical transport to the surface of N-gap-RIE in SF 6 under two different surface reactions. The spatiotemporal profiles of radicals and neutrals are demonstrated for a long time scale (0–1 s) at between 0.05 Torr and 1.0 Torr at 13.56 MHz. The estimated etch rate of Si wafer with F radicals agrees reasonably well with the previous experimental value obtained under a low-power condition. It is stressed from the present result that the ion-molecule reactions for the generation of F radicals as well as the electron impact dissociation of SF 6 are of great importance." @default.
• W2142541931 created "2016-06-24" @default.
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• W2142541931 date "1994-04-01" @default.
• W2142541931 modified "2023-09-26" @default.
• W2142541931 title "The Radical Transport in the Narrow-Gap-Reactive-Ion Etcher in SF₆by the Relaxation Continuum Model" @default.
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• W2142541931 doi "https://doi.org/10.1143/jjap.33.2223" @default.
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