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• W2143178300 abstract "The authors demonstrate a low pressure reactive ion etching process capable of patterning nanometer scale angled sidewalls and three dimensional structures in photoresist. At low pressure, the plasma has a large dark space region where the etchant ions have very large highly directional mean free paths. Mounting the sample entirely within this dark space allows for etching at angles relative to the cathode with minimal undercutting, resulting in high-aspect ratio nanometer scale angled features. By reversing the initial angle and performing a second etch, the authors create three-dimensional mask profiles." @default.
• W2143178300 created "2016-06-24" @default.
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• W2143178300 date "2013-01-01" @default.
• W2143178300 modified "2023-09-26" @default.
• W2143178300 title "Nanometer scale high-aspect-ratio trench etching at controllable angles using ballistic reactive ion etching" @default.
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• W2143178300 doi "https://doi.org/10.1116/1.4773919" @default.
• W2143178300 hasPublicationYear "2013" @default.
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