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• W2143211096 abstract "This paper shows ultra-low contact resistivities with standard NiPt silicide process that can reach 1times10-8 Omega-cm2 for both n+ and p+ Si by using novel test structures of small silicided contact with varied areas from 20-nm diameter to 260-nm diameter by e-beam lithography fabricated on highly doped substrate made by conventional source drain implantation. It demonstrates that NiPt silicide can fulfill CMOS technology requirements down to the ITRS 22nm node." @default.
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• W2143211096 date "2008-05-01" @default.
• W2143211096 modified "2023-09-26" @default.
• W2143211096 title "Extendibility of NiPt silicide to the 22-nm node CMOS technology" @default.
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• W2143211096 doi "https://doi.org/10.1109/iwjt.2008.4540037" @default.
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