SemOpenAlex |

SemOpenAlex

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2143227625> ?p ?o ?g. }

Showing items 1 to 100 of ±150 with 100 items per page.

W2143227625 abstract "We demonstrate the smallest FinFET SRAM cell size of 0.063 µm 2 reported to date using optical lithography. The cell is fabricated with contacted gate pitch (CPP) scaled to 80 nm and fin pitch scaled to 40 nm for the first time using a state-of-the-art 300 mm tool set. A unique patterning scheme featuring double-expose, double-etch (DE 2 ) sidewall image transfer (SIT) process is used for fin formation. This scheme also forms differential fin pitch in the SRAM cells, where epitaxial films are used to merge only the tight pitch devices. The epitaxial films are also used for conformal doping of the devices, which reduces the external resistance significantly. Other features include gate-first metal gate stacks and transistors with 25 nm gate lengths with excellent short channel control." @default.
W2143227625 created "2016-06-24" @default.
W2143227625 creator A5003023954 @default.
W2143227625 creator A5003034376 @default.
W2143227625 creator A5003933483 @default.
W2143227625 creator A5005572352 @default.
W2143227625 creator A5013533425 @default.
W2143227625 creator A5016605721 @default.
W2143227625 creator A5022372139 @default.
W2143227625 creator A5023977537 @default.
W2143227625 creator A5027482254 @default.
W2143227625 creator A5027876102 @default.
W2143227625 creator A5031732162 @default.
W2143227625 creator A5042896977 @default.
W2143227625 creator A5044308914 @default.
W2143227625 creator A5045627522 @default.
W2143227625 creator A5046703128 @default.
W2143227625 creator A5047415517 @default.
W2143227625 creator A5047433390 @default.
W2143227625 creator A5049459878 @default.
W2143227625 creator A5052164179 @default.
W2143227625 creator A5057937850 @default.
W2143227625 creator A5058881424 @default.
W2143227625 creator A5061640067 @default.
W2143227625 creator A5064831753 @default.
W2143227625 creator A5066357100 @default.
W2143227625 creator A5067155948 @default.
W2143227625 creator A5069211775 @default.
W2143227625 creator A5070762806 @default.
W2143227625 creator A5070952801 @default.
W2143227625 creator A5071070458 @default.
W2143227625 creator A5073697714 @default.
W2143227625 creator A5074267710 @default.
W2143227625 creator A5076955974 @default.
W2143227625 creator A5077371463 @default.
W2143227625 creator A5082003739 @default.
W2143227625 creator A5084931544 @default.
W2143227625 creator A5086004236 @default.
W2143227625 creator A5086369327 @default.
W2143227625 creator A5087324447 @default.
W2143227625 creator A5089557626 @default.
W2143227625 creator A5091759602 @default.
W2143227625 date "2010-06-01" @default.
W2143227625 modified "2023-10-11" @default.
W2143227625 title "A 0.063 µm2 FinFET SRAM cell demonstration with conventional lithography using a novel integration scheme with aggressively scaled fin and gate pitch" @default.
W2143227625 cites W2086328585 @default.
W2143227625 doi "https://doi.org/10.1109/vlsit.2010.5556135" @default.
W2143227625 hasPublicationYear "2010" @default.
W2143227625 type Work @default.
W2143227625 sameAs 2143227625 @default.
W2143227625 citedByCount "28" @default.
W2143227625 countsByYear W21432276252012 @default.
W2143227625 countsByYear W21432276252013 @default.
W2143227625 countsByYear W21432276252014 @default.
W2143227625 countsByYear W21432276252015 @default.
W2143227625 countsByYear W21432276252016 @default.
W2143227625 countsByYear W21432276252017 @default.
W2143227625 countsByYear W21432276252019 @default.
W2143227625 countsByYear W21432276252020 @default.
W2143227625 countsByYear W21432276252021 @default.
W2143227625 crossrefType "proceedings-article" @default.
W2143227625 hasAuthorship W2143227625A5003023954 @default.
W2143227625 hasAuthorship W2143227625A5003034376 @default.
W2143227625 hasAuthorship W2143227625A5003933483 @default.
W2143227625 hasAuthorship W2143227625A5005572352 @default.
W2143227625 hasAuthorship W2143227625A5013533425 @default.
W2143227625 hasAuthorship W2143227625A5016605721 @default.
W2143227625 hasAuthorship W2143227625A5022372139 @default.
W2143227625 hasAuthorship W2143227625A5023977537 @default.
W2143227625 hasAuthorship W2143227625A5027482254 @default.
W2143227625 hasAuthorship W2143227625A5027876102 @default.
W2143227625 hasAuthorship W2143227625A5031732162 @default.
W2143227625 hasAuthorship W2143227625A5042896977 @default.
W2143227625 hasAuthorship W2143227625A5044308914 @default.
W2143227625 hasAuthorship W2143227625A5045627522 @default.
W2143227625 hasAuthorship W2143227625A5046703128 @default.
W2143227625 hasAuthorship W2143227625A5047415517 @default.
W2143227625 hasAuthorship W2143227625A5047433390 @default.
W2143227625 hasAuthorship W2143227625A5049459878 @default.
W2143227625 hasAuthorship W2143227625A5052164179 @default.
W2143227625 hasAuthorship W2143227625A5057937850 @default.
W2143227625 hasAuthorship W2143227625A5058881424 @default.
W2143227625 hasAuthorship W2143227625A5061640067 @default.
W2143227625 hasAuthorship W2143227625A5064831753 @default.
W2143227625 hasAuthorship W2143227625A5066357100 @default.
W2143227625 hasAuthorship W2143227625A5067155948 @default.
W2143227625 hasAuthorship W2143227625A5069211775 @default.
W2143227625 hasAuthorship W2143227625A5070762806 @default.
W2143227625 hasAuthorship W2143227625A5070952801 @default.
W2143227625 hasAuthorship W2143227625A5071070458 @default.
W2143227625 hasAuthorship W2143227625A5073697714 @default.
W2143227625 hasAuthorship W2143227625A5074267710 @default.
W2143227625 hasAuthorship W2143227625A5076955974 @default.
W2143227625 hasAuthorship W2143227625A5077371463 @default.
W2143227625 hasAuthorship W2143227625A5082003739 @default.
W2143227625 hasAuthorship W2143227625A5084931544 @default.
W2143227625 hasAuthorship W2143227625A5086004236 @default.
W2143227625 hasAuthorship W2143227625A5086369327 @default.
W2143227625 hasAuthorship W2143227625A5087324447 @default.
W2143227625 hasAuthorship W2143227625A5089557626 @default.