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• W2143611291 abstract "The effects of RF hot-carrier stress on the characteristics of 60-GHz power amplifiers (PAs) on a CMOS 65-nm process are investigated, for the first time, in this letter. A reliability study is made on a one-stage PA to validate an aging model and the degradation explanation. A drop of 16% of the gain, 17% of the 1-dB output compression point ( <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>OCP</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1 dB</sub> ), and 17% of the <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>P</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>sat</sub> are measured at 60 GHz after 50 h of stress under <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>V</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>dd</sub> = 1.65 V with <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>P</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>in</sub> = 0 dBm and <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>V</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>dd</sub> = 1.9 V with <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>P</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>in</sub> = -10 dBm at 60-GHz frequency." @default.
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• W2143611291 date "2010-09-01" @default.
• W2143611291 modified "2023-10-18" @default.
• W2143611291 title "Hot-Carrier Stress Effect on a CMOS 65-nm 60-GHz One-Stage Power Amplifier" @default.
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• W2143611291 doi "https://doi.org/10.1109/led.2010.2055535" @default.
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