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- W2143661747 abstract "A silicon-based micromachined, floating-element sensor for low-magnitude wall shear-stress measurement has been developed. Sensors over a range of element sizes and sensitivities have been fabricated by thin-wafer bonding and deep-reactive ion-etching techniques. Detailed design, fabrication, and testing issues are described in this paper. Detection of the floating-element motion is accomplished using either direct or differential capacitance measurement. The design objective is to measure the shear-stress distribution at levels of O(0.10 Pa) with a spatial resolution of approximately O(100 /spl mu/m). It is assumed that the flow direction is known, permitting one to align the sensor appropriately so that a single component shear measurement is a good estimate of the prevalent shear. Using a differential capacitance detection scheme these goals have been achieved. We tested the sensor at shear levels ranging from 0 to 0.20 Pa and found that the lowest detectable shear-stress level that the sensor can measure is 0.04 Pa with an 8% uncertainty on a 200 /spl mu/m/spl times/500 /spl mu/m floating element plate." @default.
- W2143661747 created "2016-06-24" @default.
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- W2143661747 date "2005-02-01" @default.
- W2143661747 modified "2023-10-16" @default.
- W2143661747 title "A microfabricated wall shear-stress sensor with capacitative sensing" @default.
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- W2143661747 doi "https://doi.org/10.1109/jmems.2004.839001" @default.
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