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• W2143963740 abstract "Silicon-germanium heterojunction bipolar transistor (SiGe HBT) heavy ion-induced current transients are measured using Sandia National Laboratories' microbeam and high- and low-energy broadbeam sources at the Grand Acce?le?rateur National d'Ions Lourds, Caen, France, and the University of Jyva?skyla?, Finland. The data were captured using a custom broadband IC package and real-time digital phosphor oscilloscopes with at least 16 GHz of analog bandwidth. These data provide detailed insight into the effects of ion strike location, range, and LET." @default.
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• W2143963740 date "2009-12-01" @default.
• W2143963740 modified "2023-09-26" @default.
• W2143963740 title "Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs" @default.
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• W2143963740 doi "https://doi.org/10.1109/tns.2009.2034158" @default.
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