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• W2144084820 abstract "<para xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> GaN-based optoelectronic and electronic devices such as light-emitting diodes (LEDs), laser, and heterojunction field-effect transistors (HFETs) typically use material grown on foreign substrates such as sapphire, Si, and SiC. However, thermal and lattice mismatch present prevent attainment of quality films deemed necessary by ever increasing demand on device performance. In fact in LEDs intended for solid state lighting, internal quantum efficiencies near 100% might be needed, and further these high efficiencies would have to be retained at very high injection current levels. On the electronic device side, high radio-frequency (RF) power, particularly high-power switching devices, push the material to its limits. Consequently, as has been the case for other successful semiconductor materials systems, native substrates must be developed for the GaN family. In this paper, various approaches such as high-pressure nitrogen solution (HPNS), ammonothermal, and Na flux methods, and an intermediary technique called the hydride vapor phase epitaxy (HVPE; to a lesser extent as there is a review devoted to this technique in this issue) along with their strengths and challenges are discussed. </para>" @default.
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• W2144084820 date "2010-07-01" @default.
• W2144084820 modified "2023-10-09" @default.
• W2144084820 title "Growth of Bulk GaN and AlN: Progress and Challenges" @default.
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• W2144084820 doi "https://doi.org/10.1109/jproc.2010.2044967" @default.
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