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- W2144131175 abstract "Tin-doped In 2 O 3 (indium-tin oxide, ITO) transparent conducting films were deposited between 200 and 400°C on stripe-patterned Si substrates by spray chemical vapor deposition. ITO films with a homogeneous tin composition and crystallinity were successfully fabricated. The step coverage increased as the deposition temperature decreased and reached 90% at 200°C. Postdeposition annealing lowered the resistivity to 3.3 × 10 -4 Ω cm, which is approximately homogeneous because the measured resistance agreed well with the calculated one assuming the resistivity value of the film deposited on a flat surface and considering the film thickness of various portions. These films should contribute to optoelectric devices." @default.
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- W2144131175 date "2009-01-01" @default.
- W2144131175 modified "2023-10-18" @default.
- W2144131175 title "Good Conformability of Indium-Tin Oxide Thin Films Prepared by Spray Chemical Vapor Deposition" @default.
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- W2144131175 doi "https://doi.org/10.1149/1.3091259" @default.
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