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- W2144312079 abstract "We report the detection of phase separation of an Al 1− x In x N/GaN heterojunction grown close to lattice-matched conditions ( x ∼ 0.18) by means of Rutherford backscattering spectrometry in channelling geometry and high-resolution x-ray diffraction. An initial pseudomorphic growth of the film was found, with good single crystalline quality, the nominal composition and very low strain state. After ∼50 nm, a critical thickness is reached at which the InN molar fraction of the films drops to ∼15% and at the same time the single crystalline quality of the films degrade drastically. This spontaneous effect cannot be ascribed to strain relaxation mechanisms since both techniques show a good single crystalline growth of the ternary under lattice matched conditions." @default.
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- W2144312079 date "2010-01-21" @default.
- W2144312079 modified "2023-10-09" @default.
- W2144312079 title "Depth-resolved analysis of spontaneous phase separation in the growth of lattice-matched AlInN" @default.
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- W2144312079 doi "https://doi.org/10.1088/0022-3727/43/5/055406" @default.
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