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- W2144363865 abstract "In this work, charge trapping in silicon nanocrystals (nc-Si) distributed throughout the gate oxide in a metal oxide semiconductor (MOS) structure has been studied. This situation is different from the conventional one with nc-Si confined in a narrow layer embedded in the gate oxide. In the latter, charge trapping in nc-Si leads to a shift in capacitance-voltage characteristic (i.e., a change in the flat-band voltage). In contrast, in the former the charge trapping leads to a dramatic reduction in the MOS capacitance. The original capacitance could be recovered after the release of the trapped charges by a small bias, UV light illumination, or low-temperature thermal annealing. © 2004 The Electrochemical Society. All rights reserved." @default.
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- W2144363865 date "2005-01-01" @default.
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- W2144363865 title "Modulation of Capacitance Magnitude by Charging/Discharging in Silicon Nanocrystals Distributed Throughout the Gate Oxide in MOS Structures" @default.
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- W2144363865 doi "https://doi.org/10.1149/1.1830392" @default.
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