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- W2144452555 abstract "Thin films of hydrogenated amorphous silicon (a-Si:H) were deposited on various substrates (e.g. Cr, Ti, GaAs) and analysed by secondary ion mass spectrometry (SIMS). Depth profiles were measured using oxygen ions of 9 keV as a primary beam. Spatially resolved (or imaging) SIMS was used to determine the local distribution of the various species. At nearly normal incidence of the primary beam, the intensity of substrate-related species showed a step-like increase at ∼ 20% of the film thickness and remained at a relatively high level throughout the rest of the film. For substrates consisting of Cr films evaporated on crystalline silicon, variations of the deposition temperature and of the thickness of the a-Si:H films did not markedly influence the phenomenon. By changing the angle of incidence of the primary beam, a considerable shift of the step towards the interface between the film and the substrate was obtained. The results of depth profiling experiments, of imaging by SIMS and optical microscopy can be explained qualitatively by a beam-induced effect." @default.
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- W2144452555 date "1988-07-01" @default.
- W2144452555 modified "2023-09-23" @default.
- W2144452555 title "Detection of substrate-related species during depth profiling of a-Si:H films with SIMS" @default.
- W2144452555 cites W403708255 @default.
- W2144452555 doi "https://doi.org/10.1002/sia.740120609" @default.
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