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- W2144471330 abstract "The effects of electron and neutron irradiation on the electrical conductivity and Hall coefficient of n-type heteroepitaxial (Epi) Si/spinel have been measured and compared to those for bulk vacuum-floating-zone (VFZ) silicon. A smaller degradation rate is observed for conductivity in Epi than in VFZ Si under irradiation. This effect is primarily due to a smaller mobility in Epi compared to VFZ Si, rather than to a lower defect production rate in Epi Si. Epi and VFZ Si exhibit similar carrier removal rates under irradiation, similar relative effects of electron and neutron damage, and similar annealing characteristics below 200°C which include the temperature for vacancy-phosphorus defect annealing. These similarities imply that a major fraction of the irradiation-induced defects are the same in irradiated Epi and VFZ Si at room temperature, even though extensive disorder in the “as grown” Epi Si drastically affects the pre-irradiation mobility. Thus, the inherent initial disorder in heteroepitaxial Si films does not necessarily increase radiation tolerance." @default.
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- W2144471330 date "1973-12-01" @default.
- W2144471330 modified "2023-10-04" @default.
- W2144471330 title "Effects of electron and neutron irradiation on the electrical properties of Si on MgO·Al2O3 spinel" @default.
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- W2144471330 doi "https://doi.org/10.1016/0038-1101(73)90053-1" @default.
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