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• W2144584015 abstract "Low-energy (550 eV) argon-ion beam was used to bombard directly the backsurface of polysilicon-gate metal-oxide-semiconductor (MOS) capacitors after the completion of all conventional processing steps. The effects of this extra step on the interface characteristics of the MOS capacitors before and after hot-electron injection were investigated. After the backsurface argon-ion bombardment, the MOS capacitors showed improved interface hardness against hot-electron-induced degradation. A turn-around behavior was observed, indicating that an optimal bombardment time should be used. The physical mechanism involved could possibly be stress compensation at the Si/SiO2 interface, induced by the backsurface bombardment." @default.
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• W2144584015 date "1998-09-01" @default.
• W2144584015 modified "2023-10-16" @default.
• W2144584015 title "Suppression of hot-electron-induced interface degradation in metal-oxide-semiconductor devices by backsurface argon bombardment" @default.
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• W2144584015 doi "https://doi.org/10.1016/s0026-2714(98)00043-2" @default.
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