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• W2144711704 abstract "Stacked structures of self-assembled In 0.5 Ga 0.5 As/GaAs quantum dots (QDs) have been grown using Metal-Organic Chemical Vapor Deposition (MOCVD) with different number of stacks. High Resolution X-Ray Diffraction (HR-XRD) and Transmission Electron Microscope (TEM) characterization revealed that the formation of stacked self-assembled In 0.5 Ga 0.5 As QDs on GaAs (100) substrates were misaligned vertically and no visible defect has been detected from the cross-sectional TEM characterization. In addition, photoluminescence (PL) peak position is blue-shifted and PL intensity dramatically increased with increasing number of stacks. The peak and intensity of the PL measurement strongly depend on the structural of stacked self-assembled QDs and also the number of QDs layers." @default.
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• W2144711704 date "2010-01-01" @default.
• W2144711704 modified "2023-09-27" @default.
• W2144711704 title "Stacked structures In<inf>0.5</inf>Ga<inf>0.5</inf>As/GaAs quantum dots: Growth and characterization" @default.
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• W2144711704 doi "https://doi.org/10.1109/icectech.2010.5479936" @default.
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