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• W2145524570 abstract "Using two-dimensional process and device simulation, we present for the first time, a new high breakdown voltage two-zone base extended buried oxide (BOX) lateral Schottky Collector Bipolar Transistor (SCBT) on silicon-on-insulator with a breakdown voltage as high as 12 times that of the conventional lateral Schottky collector bipolar transistor. We have explained the new design features of the proposed Schottky collector structure and the reasons for its significantly improved breakdown performance. The proposed structure is expected to be suitable in the design of the new generation scaled high voltage Schottky collector bipolar transistors for low power high speed analog applications." @default.
• W2145524570 created "2016-06-24" @default.
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• W2145524570 date "2005-11-01" @default.
• W2145524570 modified "2023-09-27" @default.
• W2145524570 title "A New High Breakdown Voltage Lateral Schottky Collector Bipolar Transistor on SOI: Design and Analysis" @default.
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• W2145524570 doi "https://doi.org/10.1109/ted.2005.857171" @default.
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