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- W2145576286 abstract "Low resistance ohmic contacts to p-ZnSe involving the use of HgSe are studied in detail. HgSe does not form an ohmic contact with p-ZnSe because of a residual valence band offset at the heterojunction of 0.5 to 0.6 eV. Annealing of HgSe/ZnSe:N does not result in an ohmic contact because a large miscibility gap in Hg1−xZnxSe prevents a HgZn interdiffusion and therefore the formation of a graded heterojunction. The molecular beam epitaxial (MBE) growth of Hg1−xZnxSe does not circumvent this problem because these epitaxial layers suffer from a compositional phase separation due to spinodal demixing during MBE growth. A significant improvement of HgSe based contacts could be achieved by the use of ZnSe1−xTex:N transition layers between HgSe and ZnSe:N. Either by abrupt, graded, or multilayer heterojunctions, very low contact resistivities are obtained. The growth of ZnSe1−xTex:N layers on top of ZnSe:N is shown to reduce the carrier concentration in ZnSe:N by several orders of magnitude. A nitrogen diffusion process is believed to be responsible for this effect." @default.
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- W2145576286 date "1995-02-01" @default.
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- W2145576286 title "Electrical Contacts to p-ZnSe Based on HgSe and ZnTe" @default.
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- W2145576286 doi "https://doi.org/10.1002/pssb.2221870224" @default.
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