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- W2145640957 abstract "This paper describes the design and evaluation of a power amplifier (PA) for WLAN 802.11n in 65nm CMOS technology. The PA utilizes 3.3V thick-gate oxide (5.2nm) transistors and a two-stage differential configuration with two integrated inductors for input and interstage matching. For a 72.2Mbit/s, 64-QAM 802.11n OFDM signal at an average and peak output power of 9.4dBm and 17.4dBm, respectively, the measured EVM is 3.8%. The PA meets the spectral mask up to an average output power of 14dBm." @default.
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- W2145640957 date "2008-06-19" @default.
- W2145640957 modified "2023-09-23" @default.
- W2145640957 title "A 72.2Mbit/S LC-based power amplifier in 65nm CMOS for 2.4Ghz 802.11n WLAN" @default.
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