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- W2145733552 abstract "We demonstrate on-axis homoepitaxial growth of 4H-SiC(0001) PiN structure on 3-inch wafers with 100% 4H polytype in the epilayer excluding the edges. The layers were grown with a thickness of 105 µm and controlled n-type doping of 4 x 1014 cm-3.The epilayers were completely free of basal plane dislocations, in-grown stacking faults and other epitaxial defects, as required for 10 kV high power bipolar devices. Some part of the wafer had a lifetime enhancement procedure to increase lifetime to above 2 s using carbon implantation. An additional step of epilayer polishing was adapted to reduce surface roughness and implantation damage." @default.
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- W2145733552 date "2013-01-01" @default.
- W2145733552 modified "2023-10-03" @default.
- W2145733552 title "On-Axis Homoepitaxial Growth of 4H-SiC PiN Structure for High Power Applications" @default.
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- W2145733552 doi "https://doi.org/10.4028/www.scientific.net/msf.740-742.173" @default.
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