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• W2146159075 abstract "Abstract In this study, we have compared the performance of self‐aligned a‐IGZO thin‐film transistors (TFTs) whereby the source/drain (S/D) region's conductivity enhanced in three different ways, that is, using SiN x interlayer plasma (hydrogen diffusion), using calcium (Ca as reducing metal) and using argon plasma (changing the atomic ratio). All these TFTs show comparable characteristics such as field‐effect mobility ( μ FE ) of over 10.0 cm 2 /(V.s), sub‐threshold slope (SS ‐1 ) of 0.5 V/decade, and current ratio ( I ON / I OFF ) over 10 8 . However, under negative‐bias‐illumination‐stress (NBIS), all these TFTs showed strong degradation. We attributed this NBIS stability issue to the exposed S/D regions and changes in the conductivity of S/D contact regions. The hydrogen plasma‐treated TFTs showed the worst NBIS characteristics. This is linked to increased hydrogen diffusion from the S/D contact regions to the channel." @default.
• W2146159075 created "2016-06-24" @default.
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• W2146159075 date "2015-09-01" @default.
• W2146159075 modified "2023-10-05" @default.
• W2146159075 title "Impact of source/drain contacts formation of self-aligned amorphous-IGZO TFTs on their negative-bias-illumination-stress stabilities" @default.
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• W2146159075 doi "https://doi.org/10.1002/jsid.351" @default.
• W2146159075 hasPublicationYear "2015" @default.
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