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• W2146166048 abstract "Large area, high density integrated capacitors within printed wiring boards can provide a substantial decoupling capacitance with very low parasitic inductance. Tantalum pentoxide (Ta/sub 2/O/sub 5/) is an excellent dielectric for this application due to the relatively high dielectric constant (/spl sim/22-24), however the difficulty of fabricating large, defect-free capacitors has thus far prevented the realization of practical applications. High performance capacitors with Ta/sub 2/O/sub 5/ dielectric have been developed with a two step oxidation scheme at the High Density Electronics Center (HiDEC) at the University of Arkansas. The two step oxidation scheme consists of reactive sputtering followed by anodization. Thin films of Ta/sub 2/O/sub 5/ were deposited by reactive sputtering on silicon and also on Upilex/spl reg/ covered glass wafers using DC magnetron sputtering with a gas flow ratio of 10/90 O/sub 2//Ar. In the two-step oxidation scheme, anodization is performed after reactively sputtering tantalum oxide films to obtain a densified oxide structure. The electrical and physical properties of these two step oxidized sputtered/anodized tantalum oxide films are shown to be superior to those of tantalum oxide films prepared by either anodization or sputtering alone. This work has shown that Ta/sub 2/O/sub 5/ dielectric material is a potential dielectric for integrated capacitors in advanced packaging applications." @default.
• W2146166048 created "2016-06-24" @default.
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• W2146166048 date "2005-07-28" @default.
• W2146166048 modified "2023-09-26" @default.
• W2146166048 title "Dual process dielectric formation for decoupling capacitors on flexible substrates" @default.
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• W2146166048 doi "https://doi.org/10.1109/ectc.2005.1441998" @default.
• W2146166048 hasPublicationYear "2005" @default.
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