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- W2146203800 abstract "The availability of defect-free mask blanks is one of the most significant challenges facing thecommercialization of extreme ultraviolet lithography (EUVL). The SEMATECH Mask Blank Development Center(MBDC) was created to drive the development of EUVL mask blanks to meet the industry's needs. EUV mask defectscome from two primary sources: the incoming mask substrate and defects added during multilayer deposition. Forincoming defects, we have both an in-house advanced cleaning capability and an advanced in situ defect smoothingcapability. This smoothing system utilizes combinations of ion beam deposition and etch to planarize any remainingincoming substrate defects. For defects added in the multilayer deposition process, we have an aggressive program tofind, identify, and eliminate the defects. This paper summarizes progress in smoothing substrate defects and eliminatingever smaller multilayer-added defects. We will show the capability of our smoothing process to planarize our existingpopulation of bump and pit type defects and discuss how quickly this can be done. We will also discuss how manydefects are added by the planarization process. In addition, we will show 54 nm sensitivity defect data for multilayer-coatedEUV mask blanks." @default.
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- W2146203800 date "2008-03-14" @default.
- W2146203800 modified "2023-09-26" @default.
- W2146203800 title "Ion beam deposition for defect-free EUVL mask blanks" @default.
- W2146203800 doi "https://doi.org/10.1117/12.774505" @default.
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