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- W2146204559 abstract "The impact of gate dielectric nitridation methodology on time, temperature and field dependence of NBTI in SiON p-MOSFETs is studied using Ultra-Fast On-The-Fly IDLIN technique with 1mus resolution. It is shown that PNO devices with proper PNA show lower degradation magnitude, higher field dependence and therefore higher safe operating voltage compared to RTNO and PNO devices with improper PNA despite atomic N% is higher in PNO devices with proper PNA." @default.
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- W2146204559 date "2008-07-01" @default.
- W2146204559 modified "2023-09-28" @default.
- W2146204559 title "The impact of gate dielectric nitridation methodology on NBTI of SiON p-MOSFETs as studied by UF-OTF technique" @default.
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- W2146204559 doi "https://doi.org/10.1109/ipfa.2008.4588198" @default.
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