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- W2146298908 abstract "A high-speed, low-power GaAs enhancement/depletion (E/D) IC process for MSI applications (10/sup 3/ devices) is described. The process relies on high-quality molecular-beam-epitaxy (MBE)-grown modulation-doped wafers, and an etch-stop reactive ion etch (RIE) process that preserves the inherent uniformity and control achievable with this growth technique. >" @default.
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- W2146298908 date "2002-12-04" @default.
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- W2146298908 title "Self-aligned contact submicron E/D MODFET IC process: device characteristics and simple circuit applications" @default.
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