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• W2146622999 abstract "Experimental results are reported that improve our understanding of processes that initiate surface roughness from a single ion bombardment event. The results are from a scanning tunnelling microscopy (STM) study of the ion bombardment of silicon at implantation energies. Also reported is an atom by atom analysis of a single sputtering event—8 keV krypton on a cleaved crystal of PbS. In both cases a very low ion dose was used to minimize the overlap of cascades. Recent results on the bombardment of gold and graphite will also be reviewed. The results show that every impact leaves its mark on the surface, indicating that surface roughening processes can be uncleated at the atomic level." @default.
• W2146622999 created "2016-06-24" @default.
• W2146622999 creator A5002073391 @default.
• W2146622999 date "1993-07-01" @default.
• W2146622999 modified "2023-10-16" @default.
• W2146622999 title "Scanning tunnelling microscope studies of sputtering" @default.
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• W2146622999 doi "https://doi.org/10.1002/sia.740200805" @default.
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