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• W2146880032 abstract "Temperature-dependent dc characteristics and RF performances of InGaP/GaAs heterojunction bipolar transistors with sulfur treatment are systematically studied. The base-surface-recombination current, specific contact resistance, and sheet resistance of the studied devices can be effectively reduced by sulfur treatment. Practically, long-time sulfur treatment is not appropriate. In this paper, the studied device with the sulfur treatment for 12-15 min is a good choice. Experimentally, the collector-emitter offset voltage DeltaV <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>CE</sub> and dc current gain with sulfur treatment can be substantially reduced and increased, respectively, over the 300-K-400-K temperature range. Moreover, as the temperature is increased, the device with sulfur treatment exhibits temperature-independent or thermally stable performances. The devices with sulfur treatment also exhibit improved RF characteristics" @default.
• W2146880032 created "2016-06-24" @default.
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• W2146880032 date "2006-12-01" @default.
• W2146880032 modified "2023-10-17" @default.
• W2146880032 title "The Effect of Sulfur Treatment on the Temperature-Dependent Performance of InGaP/GaAs HBTs" @default.
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• W2146880032 doi "https://doi.org/10.1109/tdmr.2006.883154" @default.
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