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- W2146993775 abstract "The behavior of indium implanted in silicon-on-insulator (SOI) material is explored by using SIMS analysis to obtain the doping concentration profile as a function of the silicon film thickness for a fixed implant depth, and as a function of the implant depth for a fixed silicon film thickness. Based on the experimental data, the following observations can be made. Indium can be highly mobile and can diffuse throughout the buried oxide. As a result, there is a dopant depletion zone near the buried oxide interface. The indium doping profile can be practically invariant under certain implant conditions in thicker films. As a result of indium's highly mobile nature, a lower temperature process is necessary to maintain the as-implanted indium profile in thin-film SOI transistors." @default.
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- W2146993775 date "2002-11-23" @default.
- W2146993775 modified "2023-09-27" @default.
- W2146993775 title "Behavior of indium in thin SOI films" @default.
- W2146993775 cites W1997479030 @default.
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- W2146993775 doi "https://doi.org/10.1109/soi.1997.634936" @default.
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