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- W2147093245 abstract "The near-surface region of thin-film polycrystalline (PX) CuIn1−xGaxSe2 (CIGS) is considered important because it is the region where the electrical junction forms in a CIGS photovoltaic device. Spectroscopic ellipsometry measurements of polycrystalline CuInSe2 films reveal that there is a thin layer at the surface which has different optical and electronic properties from those of the bulk film. This surface layer of thin-film CIGS has a larger band gap and greater spin-orbit interaction energy than the bulk film. These properties indicate that the surface layer is more Cu deficient than the bulk in the nearly stoichiometric thin-film PX-CIGS used in photovoltaic devices. This work provides an insight into the importance of surface layer engineering for photovoltaic device design." @default.
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- W2147093245 date "2007-07-09" @default.
- W2147093245 modified "2023-09-23" @default.
- W2147093245 title "Spectroscopic evidence for a surface layer in CuInSe2:Cu deficiency" @default.
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- W2147093245 doi "https://doi.org/10.1063/1.2755718" @default.
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