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- W2147223691 abstract "Multicrystalline silicon thin-film solar cells with grains exceeding 100 μm were prepared by layered laser crystallization. The layer system is generated in two steps. In the first step a multicrystalline seed layer is fabricated on a low cost glass substrate. This is achieved by depositing a-Si followed by scanning a diode laser beam for crystallization. In a second step this seed layer is epitaxially thickened by electron beam evaporation of a-Si combined with repeatedly applying pulses of an excimer laser. p+pn+ and p+nn+ superstrate cells with 2 μm thick absorber were prepared with different doping levels and different thickness of the seed layer. Without reflector these cells, after hydrogen passivation, delivered V oc up to 514 mV and I sc of 17.5 mA/cm2 if deposited directly onto the glass substrate. With an additional SiN x antireflection layer I sc reached 20 mA/cm2." @default.
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- W2147223691 date "2008-05-01" @default.
- W2147223691 modified "2023-09-26" @default.
- W2147223691 title "Varying the layer structure in multicrystalline LLC-silicon thin-film solar cells" @default.
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- W2147223691 doi "https://doi.org/10.1109/pvsc.2008.4922803" @default.
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