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- W2147243669 abstract "The novel metastable dilute nitride material Ga(NAsP) is a very promising candidate for electrically pumped lasers on silicon because it can be pseudomorphically grown on silicon substrate. Here we investigate the optical properties of a series of multi-quantum well Ga(NAsP) samples grown lattice matched on GaP and Si substrates. Temperature and excitation resolved photoluminescence spectroscopy indicates a significant impact of disorder-induced carrier localization effects on the optical properties. On the other hand, optical gain measurements reveal high modal gain up to 80 cm−1 at room temperature and demonstrate the suitability of this new material as an active material for laser devices. A comparative analysis of optical gain and photoluminescence data demonstrates a strong impact of the barrier-growth conditions on the optical quality of the material." @default.
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- W2147243669 date "2011-06-01" @default.
- W2147243669 modified "2023-09-27" @default.
- W2147243669 title "Time-resolved photoluminescence and optical gain of Ga(NAsP) heterostructures pseudomorphically grown on silicon (001) substrate" @default.
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- W2147243669 doi "https://doi.org/10.1109/icton.2011.5970794" @default.
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