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- W2147381424 abstract "Trapping times of drifting electrons and holes were measured in high resistivity standard, oxygenated and magnetic Czochralski p-type materials with charge correction method. Diodes were irradiated with neutrons up to equivalent fluence Phi = 3 times 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>14</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-2</sup> . Trapping times were parameterized as 1/tau = betaPhi. Average beta was measured to be beta <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>e</sub> = 4.2 times 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-16</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> ns <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-1</sup> for electrons and beta <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>h</sub> = 4.3 times 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-16</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> ns <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-1</sup> for holes." @default.
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- W2147381424 date "2006-10-01" @default.
- W2147381424 modified "2023-10-18" @default.
- W2147381424 title "Trapping of Electrons and Holes in p-type Silicon Irradiated with Neutrons" @default.
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- W2147381424 doi "https://doi.org/10.1109/nssmic.2006.356125" @default.
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