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- W2147409311 abstract "In this paper, we present a variational electromagnetic-semiconductor coupled solver to assess the impacts of process variations on the 3D integrated circuit (3D IC) on-chip structures. The solver employs the finite volume method (FVM) to handle a system of equation considering both the full-wave electromagnetic effects and semiconductor effects. With a smart geometrical variation model for the FVM discretization, the solver is able to handle both small-size or large-size variations. Moreover, a weighted principle factor analysis (wPFA) technique is presented to reduce the random variables in both electromagnetic and semiconductor regions, and the spectral stochastic collocation method (SSCM) [10] is used to generate the quadratic statistical model. Numerical results validate the accuracy and efficiency of this solver in dealing with process variations in hybrid material through-silicon via (TSV) structures." @default.
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- W2147409311 date "2012-03-12" @default.
- W2147409311 modified "2023-10-13" @default.
- W2147409311 title "Efficient variation-aware EM-semiconductor coupled solver for the TSV structures in 3D IC" @default.
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- W2147409311 doi "https://doi.org/10.5555/2492708.2493053" @default.
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