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- W2147417265 abstract "The device performance and reliability of higher-/spl kappa/ HfTaTiO gate dielectrics have been investigated in this letter. HfTaTiO dielectrics have been reported to have a high-/spl kappa/ value of 56 and acceptable barrier height relative to Si (1.0 eV). Through process optimization, an ultrathin equivalent oxide thickness (EOT) (/spl sim/9 /spl Aring/) has been achieved. HfTaTiO nMOSFET characteristics have been studied as well. The peak mobility of HfTaTiO is 50% higher than that of HfO/sub 2/ and its high field mobility is comparable to that of HfSiON with an intentionally grown SiO/sub 2/ interface, indicative of superior quality of the interface and bulk dielectric. In addition, HfTaTiO dielectric has a reduced stress-induced leakage current (SILC) and improved breakdown voltage compared to HfO/sub 2/ dielectric." @default.
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- W2147417265 date "2005-11-01" @default.
- W2147417265 modified "2023-10-16" @default.
- W2147417265 title "Improved device performance and reliability in high /spl kappa/ HfTaTiO gate dielectric with TaN gate electrode" @default.
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- W2147417265 doi "https://doi.org/10.1109/led.2005.857698" @default.
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