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Matches in SemOpenAlex for { <https://semopenalex.org/work/W2147445052> ?p ?o ?g. }

• W2147445052 abstract "6A EOT Si 0.45 Ge 0.55 pFETs with 10 year lifetime at operating conditions (V DD =1V) are demonstrated. Ultra-thin EOT is achieved by interfacial layer (IL) scavenging. Negative Bias Temperature Instability (NBTI) is alleviated using a high Ge fraction, a thick SiGe quantum well (QW) and a thin Si cap. Hot Carrier Injection (HCI) and Time Dependent Dielectric Breakdown (TDDB) are shown also to not constitute a showstopper for optimized SiGe devices." @default.
• W2147445052 created "2016-06-24" @default.
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• W2147445052 date "2010-12-01" @default.
• W2147445052 modified "2023-10-01" @default.
• W2147445052 title "6&#x00C5; EOT Si<inf>0.45</inf>Ge<inf>0.55</inf> pMOSFET with optimized reliability (V<inf>DD</inf>=1V): Meeting the NBTI lifetime target at ultra-thin EOT" @default.
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• W2147445052 doi "https://doi.org/10.1109/iedm.2010.5703292" @default.
• W2147445052 hasPublicationYear "2010" @default.
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