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• W2147712419 abstract "Raman scattering by coupled plasmon-phonon modes is studied with Si-doped InAs epilayers grown by MBE with carrier concentrations from 7.5*1017 cm-3 to 4*1019 cm-3. Unexpectedly, an unscreened LO line is observed throughout the whole carrier concentration range together with a low frequency (L-) line arising from wavevector dependent LO phonon-plasmon coupling. The frequency of the L- branch lies between the LO and TO phonon frequencies and approaches the TO frequency asymptotically from the high-frequency side as the carrier concentration increases. This behaviour is attributed to competition between screening (dominant in the high-density limit) and large-wavevector induced decoupling. The L+ branch of the plasmon-phonon system is observed for the first time in Raman experiments with InAs." @default.
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• W2147712419 date "1992-09-01" @default.
• W2147712419 modified "2023-09-26" @default.
• W2147712419 title "Raman scattering by plasmon-phonon modes in highly doped n-InAs grown by molecular beam epitaxy" @default.
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• W2147712419 doi "https://doi.org/10.1088/0268-1242/7/9/002" @default.
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