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- W2147733466 abstract "GaTeSb materials possess excellent phase change properties comparable to conventional GeSbTe-based PCM systems. GaTeSb-based quaternary systems are engineered and evaluated as thin film methodologically using x-ray diffraction, isothermal and non-isothermal calculation of activation energies, differential thermal analysis, followed by device characterization on electrical performances, endurance and retention. Quaternary GaTeSb-based systems are proven to be temperature-robust with fast switching characteristics." @default.
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- W2147733466 date "2011-05-01" @default.
- W2147733466 modified "2023-10-18" @default.
- W2147733466 title "Temperature Robust Phase Change Memory Using Quaternary Material System Based on Ga2TeSb7" @default.
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- W2147733466 doi "https://doi.org/10.1109/imw.2011.5873240" @default.
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