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- W2148440134 abstract "The authors have fabricated an InGaAs/InAlAs HEMT structure with a strained InGaP Schottky contact layer to achieve selective wet gate recess etching and to improve reliability for thermal stress. Strained In/sub 0.75/Ga/sub 0.25/P grown on InAlAs has been revealed to have sufficient Schottky barrier height for use as a gate contact. Threshold voltage standard deviation has been reduced to one fifth that of a conventional InGaAs/InAlAs HEMT, as a result of successful selective recess etching. After thermal treatment at 300 degrees C for 5 min, the drain current and transconductance did not change, while those of the conventional HEMT decreased by more than 10%.< <ETX xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>></ETX>" @default.
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- W2148440134 date "1993-05-01" @default.
- W2148440134 modified "2023-09-25" @default.
- W2148440134 title "InGaAs/InAlAs HEMT with a strained InGaP Schottky contact layer" @default.
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- W2148440134 doi "https://doi.org/10.1109/55.215186" @default.
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