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• W2148654043 abstract "Lateral asymmetric channel doping is applied to 45-nm technology NFET devices. The measured effective drain-current enhancement over coprocessed symmetric control devices is 10%. Analysis reveals that the dominant physical mechanism, which accounts for two-third of the total enhanced drain current, is an 8% increase in the source-side injection velocity. The remaining one-third is attributed to the decreased drain-induced barrier lowering. This paper concludes with an analysis of the switching characteristics of CMOS inverters composed of an asymmetric NFET and a companion symmetric PFET and shows a 5% improvement in the delay. The improvement is explained in terms of the increased velocity and 30% reduction in drain junction capacitance." @default.
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• W2148654043 date "2009-12-01" @default.
• W2148654043 modified "2023-10-06" @default.
• W2148654043 title "Impact of Lateral Asymmetric Channel Doping on 45-nm-Technology N-Type SOI MOSFETs" @default.
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• W2148654043 doi "https://doi.org/10.1109/ted.2009.2032750" @default.
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