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- W2149135359 abstract "The oxidation behavior of high‐purity silicon carbide (SiC) prepared by chemical vapor deposition was investigated by thermogravimetry, transmission electron microscopy, and Raman spectroscopy in the temperature range 1534–1902 K in pure O 2 . The carbon layer formed at the SiC/SiO 2 interface upon oxidation above 1784 K. Raman peaks corresponding to D ‐ and G ‐bands could be identified from the carbon layer. Bubbles were observed in the SiO 2 scale after the oxidation at 1873 K. This could be attributed to the accumulation of CO gas at the SiC/SiO 2 interface, resulting in the formation of the carbon layer and bubbles. These suggest that the oxidation rate of SiC is limited by the outward diffusion of CO in the SiO 2 scale in this temperature range." @default.
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- W2149135359 date "2014-02-09" @default.
- W2149135359 modified "2023-10-05" @default.
- W2149135359 title "Carbon Interlayer Between CVD SiC and SiO<sub>2</sub> in High-Temperature Passive Oxidation" @default.
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- W2149135359 doi "https://doi.org/10.1111/jace.12833" @default.
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